A. S. Oates
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- Sorted by Year/Conf, Year/Citation, Citation
| 2001 | ||
|---|---|---|
| 3 | Hot-carrier-Induced Circuit Degradation for 0.18 µm CMOS Technology. Wei Li, Qiang Li, J. S. Yuan, Joshua McConkey, Yuan Chen, Sundar Chetlur, Jonathan Zhou, A. S. Oates. ISQED 2001, 284-289. Web SearchBibTeXDownload | |
| 2 | Hot-carrier-Induced Circuit Degradation for 0.18 ?m CMOS Technology. Wei Li, Qiang Li, J. S. Yuan, Joshua McConkey, Yuan Chen, Sundar Chetlur, Jonathan Zhou, A. S. Oates. ISQED 2001, 284-289. Web SearchBibTeXDownload | |
| 1 | A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. M. M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates. Microelectronics Reliability (41): 169-177 (2001). Web SearchBibTeXDownload | |
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